 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| savantic semiconductor product specification silicon pnp power transistors 2SB1155 d escription with to-3pfa package complement to type 2sd1706 low collector saturation voltage satisfactory linearity of h fe applications for power switching applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -130 v v ceo collector-emitter voltage open base -80 v v ebo emitter-base voltage open collector -7 v i c collector current -15 a i cm collector current-peak -25 a t c =25 80 p c collector power dissipation t a =25 3 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon pnp power transistors 2SB1155 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-10ma ;i b =0 -80 v v cesat-1 collector-emitter saturation voltage i c =-7a ;i b =-0.35a -0.5 v v cesat-2 collector-emitter saturation voltage i c =-15a ;i b =-1.5a -1.5 v v besat-1 base-emitter saturation voltage i c =-7a ;i b =-0.35a -1.5 v v besat-2 base-emitter saturation voltage i c =-15a ;i b =-1.5a -2.5 v i cbo collector cut-off current v cb =-100v; i e =0 -10 a i ebo emitter cut-off current v eb =-5v; i c =0 -50 a h fe-1 dc current gain i c =-0.1a ; v ce =-2v 45 h fe -2 dc current gain i c =-3a ; v ce =-2v 90 260 h fe -3 dc current gain i c =-8a ; v ce =-2v 30 f t transition frequency i c =-0.5a ; v ce =-10v;f=10mhz 25 mhz switching times t on turn-on time 0.5 s t stg storage time 1.3 s t f fall time i c =-7a ;i b1 =-i b2 =-0.7a v cc =-50v 0.2 s h fe-2 classifications q p 90-180 130-260 savantic semiconductor product specification 3 silicon pnp power transistors 2SB1155 package outline fig.2 outline dimensions (unindicated tolerance: 0.30mm) savantic semiconductor product specification 4 silicon pnp power transistors 2SB1155 |
Price & Availability of 2SB1155
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |